<^>emi-t,onductoi , o ne.. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistor 2SC937 description ? high breakdown voltage- : vcbo= 1200v(min) ? high reliability applications ? designed for tv horizontal deflection output applications. absolute maximum ratings(ta=25-c) symbol vcbo vceo vebo ic icp pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current- continuous collector current-pulse collector power dissipation @ tc= 25 'c junction temperature storage temperature range value 1200 500 6 2.5 6 22 125 -45-125 unit v v v a a w ?c ?c 3 nt ? 2 pin 1.base remitter 3. collect or (case) to-3 package , f ie v- a t ? ft p_ n_^ ' ' i -4u-d xck^\? 3? -3 i * cd vn-^-x'^ \_ " \ c (pl y"? / ^ 5 c i nun dim mm max a 39.00 b 25.30 7.80 0 0.90 e 140 5667 a. so 1.10 ,60 g 10,92 h s46 k 11.40 l 16.75 k 1940 q 4.00 v 30.00 v 4,30 13so 1705 1962 420 3020 450 ; t i b ' 1 n.i semi-conductors reserves the right to change tost conditions, parameter limits and package dimensions without notice. intbrmiitioii kirnished by n.i semi-conductors is believed to he holh accurate and reliahle at hie time ofyoinu to press. moucncr. n.i semi-condnctors assumes no responsibilit> lor ain errors or omissions discovered in its use." n i semi-( 'oiuluciors enc silicon npn power transistor 2SC937 electrical characteristics tc=25c unless otherwise specified symbol v(br)ceo vce(sat) vee(sat) icbx iebo tf parameter collector-emitter breakdown voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current emitter cutoff current fall time conditions ,lc= 10ma; rbe= lc= 2.5a; ib= 0.8a lc= 2.5a; ib= 0.8a vcb=1 200v; veb= 1.5v veb= 6v; lc= 0 lc= 2.5a, ib1= 0.8a, ib2f -1.1 a; lb= 10|j h min 500 typ. * max 5.0 1.8 1 0.2 1.2 unit v v v ma ma m s
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